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IR Absorption Frequency: Hybridization

IR Absorption Frequency: Hybridization

Hydrocarbons such as alkanes, alkenes, and alkynes show characteristic C–H stretching absorption bands. These IR stretching frequencies depend on the hybridization of the involved carbon atom and can be explained in terms of the s character of each hybridized atomic orbital.
Among the sp, sp2, and sp3 hybridized orbitals, sp orbitals have the maximum s character (50%). Consequently, the electrons are held more closely to the nucleus, resulting in stronger and shorter C–H bonds that...

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Related Experiment Video

Updated: Apr 18, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Tunable THz absorption in graphene-based heterostructures.

Xin-Hua Deng, Jiang-Tao Liu, Jiren Yuan

|January 22, 2015

Summary

Graphene heterostructures achieve perfect terahertz (THz) absorption through photon localization. This absorption is tunable from 0 to 100% using gate voltage, offering potential in optoelectronic devices.

Area of Science:

Condensed Matter Physics
Materials Science
Optoelectronics

Background:

Graphene exhibits unique electronic and optical properties.
Terahertz (THz) absorption in materials is crucial for various applications.
Heterostructures offer tunable properties by combining different materials.

Purpose of the Study:

To investigate the THz absorption properties of graphene-based heterostructures.
To demonstrate a method for achieving perfect THz absorption.
To explore the tunability of THz absorption in these structures.

Main Methods:

Utilizing the characteristic matrix method based on conductivity.
Analyzing photon localization within a defect layer of the heterostructure.

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Last Updated: Apr 18, 2026

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Employing gate voltage to control chemical potential and tune absorption.

Main Results:

Achieved perfect THz absorption due to strong photon localization.
Demonstrated continuous tunability of THz absorption from 0 to 100% via gate voltage.
Showed that absorption can be tailored by adjusting incident angle, period number, center wavelength, and layer thicknesses.

Conclusions:

Graphene-based heterostructures can achieve tunable, near-perfect THz absorption.
The proposed structure has potential applications in advanced optoelectronic devices.
Control over chemical potential and structural parameters allows for precise THz absorption tailoring.