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Updated: Apr 18, 2026
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Enhancement of the evanescent wave coupling effect in a sub-wavelength-sized GaAs/AlGaAs ridge structure by
Abstract:
We have investigated the three-dimensional emission patterns of GaAs/AlGaAs ridge structures with a sub-wavelength-sized top-flat facet by angle-resolved photoluminescence (PL). We found that the integrated PL intensity, and hence the light-extraction efficiency, can be enhanced by about 34% just by covering the ridge surface with a thin SiO2 layer. A double-coupling effect of evanescent waves that occurs at both the semiconductor-SiO2 and SiO2-air interfaces is suggested to be responsible for the improvement, based on a finite-difference time-domain simulation of the electromagnetic field around the ridge top.
