Magnetic materials. Tilt engineering of spontaneous polarization and magnetization above 300 K in a bulk layered perovskite
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Updated: Apr 18, 2026

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
Published on: July 26, 2016
Michael J Pitcher1, Pranab Mandal1, Matthew S Dyer1
1Department of Chemistry, University of Liverpool, Crown Street, Liverpool L69 7ZD, UK.
Abstract:
Crystalline materials that combine electrical polarization and magnetization could be advantageous in applications such as information storage, but these properties are usually considered to have incompatible chemical bonding and electronic requirements. Recent theoretical work on perovskite materials suggested a route for combining both properties. We used crystal chemistry to engineer specific atomic displacements in a layered perovskite, (Ca(y)Sr(1- y))(1.15)Tb(1.85)Fe2O7, that change its symmetry and simultaneously generate electrical polarization and magnetization above room temperature. The two resulting properties are magnetoelectrically coupled as they arise from the same displacements.
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