Static and dynamic aspects of black silicon formation

David Abi Saab1, Philippe Basset1, Matthew J Pierotti2

  • 1Université Paris-Est, ESYCOM, ESIEE Paris, 93162 Noisy le Grand, France.

Physical Review Letters
|January 24, 2015
PubMed
Summary

This study explains black silicon (BSi) formation using cryogenic reactive ion etching (RIE). The research details BSi topography, its low reflectivity, and a novel etching phenomenon.