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Gate-tuned quantum oscillations of topological surface states in β-Ag2Te
Azat Sulaev1, Weiguang Zhu2, Kie Leong Teo3
1School of Physical and Mathematical Sciences, Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371.
Abstract:
We report the strong experimental evidence of the existence of topological surface states with large electric field tunability and mobility in β-Ag2Te. Pronounced 2D Shubnikov-de Haas oscillations have been observed in β-Ag2Te nanoplates. A Berry phase is determined to be near π using the Landau level fan diagram for a relatively wide nanoplate while the largest electric field ambipolar effect in topological insulator so far (~2500%) is observed in a narrow nanoplate. The π Berry phase and the evolution of quantum oscillations with gate voltage (Vg) in the nanoplates strongly indicate the presence of topological surface states in β-Ag2Te. Moreover, the mobility of the narrow Ag2Te nanoplate is about several thousand cm(2)s(-1)V(-1). Our results suggest that β-Ag2Te has the potential to become an important material in the investigation of topological insulators.
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