Related Experiment Video
Updated: Apr 18, 2026

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity
Published on: March 6, 2017
A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells
Deniz Bozyigit1, Weyde M M Lin1, Nuri Yazdani1
1Laboratory for Nanoelectronics, Department of Information Technology and Electrical Engineering, ETH Zurich 8092, Switzerland.
Abstract:
Improving devices incorporating solution-processed nanocrystal-based semiconductors requires a better understanding of charge transport in these complex, inorganic-organic materials. Here we perform a systematic study on PbS nanocrystal-based diodes using temperature-dependent current-voltage characterization and thermal admittance spectroscopy to develop a model for charge transport that is applicable to different nanocrystal-solids and device architectures. Our analysis confirms that charge transport occurs in states that derive from the quantum-confined electronic levels of the individual nanocrystals and is governed by diffusion-controlled trap-assisted recombination. The current is limited not by the Schottky effect, but by Fermi-level pinning because of trap states that is independent of the electrode-nanocrystal interface. Our model successfully explains the non-trivial trends in charge transport as a function of nanocrystal size and the origins of the trade-offs facing the optimization of nanocrystal-based solar cells. We use the insights from our charge transport model to formulate design guidelines for engineering higher-performance nanocrystal-based devices.
Related Concept Videos
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
P-N junction
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Imperfections in Crystal Structure: Stoichiometric Point Defects

