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Low temperature delayed recombination and trap tunneling.

E Mihóková1, L S Schulman

  • 1Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 53 Prague 6, Czech Republic.

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|January 29, 2015
PubMed
Summary
This summary is machine-generated.

Delayed recombination in fast scintillators is caused by quantum tunneling, not just heat. This study quantizes trap locations and energy levels, explaining low-temperature effects in activator materials.

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Area of Science:

  • Solid-state physics
  • Materials science
  • Quantum mechanics

Background:

  • Delayed recombination of charge carriers at activators hinders fast scintillator performance.
  • This phenomenon is typically attributed to thermal effects but persists at low temperatures.

Purpose of the Study:

  • To investigate the cause of low-temperature delayed recombination in fast scintillators.
  • To provide a theoretical framework explaining this phenomenon through quantum tunneling.

Main Methods:

  • Developing analytic estimates relating activator-trap energy levels and distances to recombination rates.
  • Performing numerical calculations in lower dimensions to validate estimates.
  • Applying the developed formulas to experimental data involving Pr activator.

Main Results:

  • Evidence supporting quantum tunneling between activators and nearby traps as the cause of delayed recombination.
  • Analytic estimates accurately predict recombination behavior and are consistent with numerical calculations.
  • Formulas derived allow for the determination of trap locations based on energy depth, demonstrated with Pr examples.

Conclusions:

  • Quantum tunneling is a key mechanism for low-temperature delayed recombination in fast scintillators.
  • The developed theoretical framework provides a quantitative understanding of trap characteristics influencing scintillator performance.
  • This research offers a method to locate and characterize traps in activator materials.