Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

863
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
863
P-N junction01:11

P-N junction

1.8K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.8K
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

2.0K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
2.0K
Schottky Barrier Diode01:27

Schottky Barrier Diode

1.3K
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
1.3K
Biasing of P-N Junction01:16

Biasing of P-N Junction

2.7K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.7K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Group B streptococcal membrane vesicles induce proinflammatory responses in neonatal meninges.

Infection and immunity·2026
Same author

Bisphosphonate zoledronic acid blocks secretory autophagy and inhibits bone resorptive functions in osteoclasts.

Autophagy·2026
Same author

Remote CF<sub>4</sub> Plasma Fluorination of Graphene for Low-Damage Spin-Orbit Engineering.

Nano letters·2026
Same author

Multi-attribute prediction of protein composition and hardness using semantic segmentation for 3D-Printed plant-based meat analogues.

Current research in food science·2026
Same author

Modeling the relationship between sensory attributes and liking using generalized additive mixed models: a case study of plant-based meat alternatives.

NPJ science of food·2026
Same author

Prepatterned Superconducting Contacts for Clean Superconductor-Topological Material Interfaces Enabling Long-Range Josephson Coupling.

Nano letters·2026

Related Experiment Video

Updated: Apr 18, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.5K

Ultimately short ballistic vertical graphene Josephson junctions.

Gil-Ho Lee1, Sol Kim2, Seung-Hoon Jhi2

  • 11] Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea [2].

Nature Communications
|January 31, 2015
PubMed
Summary

Researchers created novel hybrid Josephson junctions using a single layer of graphene. This breakthrough enables strong Josephson coupling and ballistic transport, paving the way for advanced superconducting quantum devices.

More Related Videos

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.3K
Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

17.6K

Related Experiment Videos

Last Updated: Apr 18, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.5K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.3K
Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

17.6K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Information Science

Background:

  • Hybrid Josephson junctions are crucial for fundamental physics studies and superconducting quantum devices.
  • Previous efforts were limited by diffusive conducting channels and interfaces.
  • Developing junctions with highly transparent interfaces is essential.

Purpose of the Study:

  • To overcome limitations of diffusive interfaces in hybrid Josephson junctions.
  • To realize a short, ballistic conducting channel for enhanced Josephson coupling.
  • To explore exotic coherence phenomena at the atomic scale.

Main Methods:

  • Vertically sandwiching a cleaved graphene monoatomic layer between superconducting electrodes.
  • Utilizing atomically thin, single-crystalline graphene as a normal-conducting spacer.
  • Fabricating Josephson junctions with highly transparent interfaces.

Main Results:

  • Achieved strong Josephson coupling, nearing the theoretical limit.
  • Observed convex-shaped temperature dependence of Josephson critical current.
  • Demonstrated exceptionally skewed phase dependence of Josephson current, indicating ballistic transport.
  • Confirmed the bona fide short and ballistic nature of the junctions.

Conclusions:

  • The vertical stacking scheme with atomically thin graphene enables superior Josephson junctions.
  • This approach overcomes the limitations of diffusive interfaces.
  • It opens new avenues for exploring atomic-scale coherence phenomena and advancing superconducting quantum technologies.