Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Dilute magnetism and edge-state engineering in monolayer SnO.

Nanoscale advances·2026
Same author

Structural Analysis of a Novel Trisaccharide Containing Fructopyranoside Residue Isolated from a Fermented Beverage of Plant Extracts.

Journal of applied glycoscience·2026
Same author

Disorder-Induced Symmetry Breaking in Moiré Bands of Marginally Twisted Bilayer MoS<sub>2</sub>.

ACS nano·2026
Same author

Trion Transfer in Mixed-Dimensional Heterostructures.

ACS nano·2026
Same author

Balancing positive and negative luminescence for thermoradiative signatureless communications.

Light, science & applications·2026
Same author

Orbitally Resolved Single-Photon Emission from an Individual Atomic Vacancy Center in a Semiconductor.

ACS nano·2026

Related Experiment Video

Updated: Apr 17, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.7K

Self-limiting layer-by-layer oxidation of atomically thin WSe2.

Mahito Yamamoto1, Sudipta Dutta, Shinya Aikawa

  • 1WPI Center for Materials Nanoarchitechtonics (WPI-MANA) and ‡International Center for Young Scientists, National Institute for Materials Science , Tsukuba, Ibaraki 305-0044, Japan.

Nano Letters
|February 4, 2015
PubMed
Summary
This summary is machine-generated.

Atomically thin tungsten oxide films with tunable thickness were grown on WSe2 using ozone. This method creates uniform oxide films on semiconductors for electronic devices.

Keywords:
Layered transition metal dichalcogenidesRaman spectroscopyX-ray photoelectron spectroscopyab initio calculationsoxidationphotoluminescencetungsten diselenide

More Related Videos

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
08:49

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

Published on: December 4, 2014

14.9K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K

Related Experiment Videos

Last Updated: Apr 17, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.7K
Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
08:49

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

Published on: December 4, 2014

14.9K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K

Area of Science:

  • Materials Science
  • Surface Chemistry
  • Condensed Matter Physics

Background:

  • Uniform oxide films on 2D materials are crucial for advanced electronic and optoelectronic devices.
  • Controlling oxide film thickness and uniformity on transition metal dichalcogenides (TMDs) remains a challenge.

Purpose of the Study:

  • To demonstrate a method for growing uniform, self-limiting oxide films on atomically thin tungsten diselenide (WSe2).
  • To explore the effects of ozone oxidation on WSe2 at different temperatures.
  • To characterize the resulting oxide films and their impact on the underlying WSe2.

Main Methods:

  • Exposure of atomically thin WSe2 to ozone (O3) at controlled temperatures.
  • Lateral growth and coalescence of tungsten oxide along specific WSe2 crystal orientations.
  • Characterization using photoluminescence and Raman spectroscopy.

Main Results:

  • Homogeneous surface oxidation of WSe2 achieved with self-limiting thickness (single- to trilayers).
  • Selective lateral growth of tungsten oxide along selenium zigzag-edge orientations below 100 °C.
  • Oxidation transitions to layer-by-layer growth at higher temperatures.
  • Formation of nearly atomically flat oxide films.
  • Underlying WSe2 remains decoupled but becomes hole-doped.

Conclusions:

  • Ozone oxidation offers a new strategy for creating tunable, uniform oxide films on WSe2.
  • This process enables the fabrication of atomically thin semiconductor-insulator heterostructures.
  • Potential applications in next-generation electronic devices.