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Transfer of self-aligned spacer patterns for single-digit nanofabrication
Gregory S Doerk1, He Gao, Lei Wan
1HGST, a Western Digital Co., 3403 Yerba Buena Road, San Jose, CA 95135, USA.
Nanotechnology
|February 7, 2015
Summary
We demonstrate a novel method for transferring sub-10 nm grating patterns into silicon using block copolymer self-assembly and advanced etching techniques. This process enables high-density nanopatterning for future nanoimprint templates.
Area of Science:
- Nanofabrication
- Materials Science
- Lithography
Background:
- Achieving sub-10 nm patterning is crucial for next-generation semiconductor devices.
- Existing methods face challenges in resolution and pattern fidelity.
Purpose of the Study:
- To develop a reliable method for transferring sub-10 nm half-pitch grating patterns into silicon.
- To enable the fabrication of high-density nanoimprint templates.
Main Methods:
- Utilizing block copolymer directed self-assembly (BCP DSA) for initial pattern formation.
- Employing sidewall spacer-based self-aligned double patterning (SADP).
- Utilizing low substrate bias reactive ion etching (RIE) with TiOx and CrNx hard masks for pattern transfer.
Main Results:
- Successfully transferred sub-10 nm half-pitch grating patterns into Si substrates.
- Achieved distinct, pitch-halved spacers with minimal etch byproduct redeposition.
- Demonstrated low roughness and fine placement control in etched Si lines.
Conclusions:
- The presented pattern transfer technique is effective for high-resolution nanopatterning.
- This method is directly applicable to fabricating high-density ( > 1.5 Td/in²) rectangular bit pattern nanoimprint templates.
