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Related Concept Videos

P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Biasing of P-N Junction01:16

Biasing of P-N Junction

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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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π Electron Effects on Chemical Shift: Overview01:27

π Electron Effects on Chemical Shift: Overview

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An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0,...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Scanning Electron Microscopy01:07

Scanning Electron Microscopy

6.1K
A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
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Doping GaP Core-Shell Nanowire pn-Junctions: A Study by Off-Axis Electron Holography.

Sadegh Yazdi1, Alexander Berg2, Magnus T Borgström2

  • 1Center for Electron Nanoscopy, Technical University of Denmark, DK-2800 Kgs., Lyngby, Denmark.

Small (Weinheim an Der Bergstrasse, Germany)
|February 7, 2015
PubMed
Summary

Triethyltin (TESn) is the most effective precursor for n-type doping GaP nanowires. Off-axis electron holography maps electrostatic potential, revealing higher potentials in VLS-grown cores due to carbon doping differences.

Keywords:
core-shell nanowireselectron holographyelectrostatic potentialgallium phosphidenanowires, dopingpotential maps

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Gallium Phosphide (GaP) core-shell nanowires are crucial for advanced electronic devices.
  • Understanding dopant distribution is essential for optimizing nanowire performance.
  • Current methods struggle to precisely map electrostatic potentials in nanostructures.

Purpose of the Study:

  • To evaluate different precursors for n-type doping of GaP nanowire shells.
  • To map the electrostatic potential distribution in doped GaP core-shell nanowires.
  • To correlate potential distribution with growth mechanisms and dopant incorporation.

Main Methods:

  • Utilizing off-axis electron holography to map electrostatic potential distribution.
  • Investigating triethyltin (TESn), ditertiarybutylselenide, and silane as n-type doping precursors.
  • Analyzing GaP nanowires grown via vapor-liquid-solid (VLS) and vapor-solid (VS) mechanisms.

Main Results:

  • Triethyltin (TESn) demonstrated the highest efficiency for n-type doping.
  • Off-axis electron holography revealed distinct electrostatic potentials between VLS (core) and VS (shell) regions.
  • Higher potentials were observed in VLS-grown core regions, linked to unintentional carbon doping.

Conclusions:

  • Off-axis electron holography provides high-resolution mapping of electrostatic potential and active dopant distribution in doped nanowires.
  • Dopant incorporation efficiency varies significantly between VLS and VS growth mechanisms.
  • TESn is identified as a superior precursor for n-type doping of GaP nanowires.