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Structural and optical properties of disc-in-wire InGaN/GaN LEDs.

Lifan Yan¹, Shafat Jahangir, Scott A Wight

¹Department of Material Science and Engineering and ‡Center of Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan , Ann Arbor, Michigan 48109-2130, United States.

|February 7, 2015

Summary

This study on Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) nanowire LEDs reveals that lower nanowire coverage enhances Gallium Nitride (GaN) bandgap emission. Nanocrowns from stacking faults likely reduce optical output.

Keywords:

InGaN LEDs cathodoluminescence disc-in-wire nanowire

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Area of Science:

Semiconductor Nanostructures
Optoelectronics
Materials Science

Background:

Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) nanowires are crucial for light-emitting diode (LED) development.
Understanding microstructure-optical property relationships is key to optimizing nanowire LED performance.
Silicon (Si) substrates offer a scalable platform for nanowire growth.

Purpose of the Study:

To investigate how nanowire coverage affects the microstructure and optical properties of InGaN/GaN nanowire LEDs on Si(111).
To correlate structural features with observed optical emission characteristics.

Main Methods:

Fabrication of InGaN/GaN nanowire LED structures on Si(111) with varying nanowire coverages.
Cathodoluminescence (CL) spectroscopy to analyze optical emission.
Transmission electron microscopy (TEM) to examine microstructure and morphology.

Main Results:

All samples showed broad emission around 1.95 eV (635 nm).
Higher Gallium Nitride (GaN) bandgap emission (∼3.4 eV) was observed with decreased nanowire coverage, correlating with reduced coalescence.
Variations in Indium Gallium Nitride (InGaN) disc morphology (faceted layers, quantum dots) and nonepitaxial
nanocrown
branching from stacking faults were identified via TEM.

Conclusions:

Nanowire coverage significantly influences the optical properties of InGaN/GaN nanowire LEDs.
Reduced nanowire coalescence and the presence of nanocrowns, likely due to grain boundaries, can impact emission intensity and quality.