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Related Experiment Video

Updated: Apr 17, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy.

Shengqiang Zhou¹, Fang Liu², S Prucnal¹

¹Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden, Germany.

Scientific Reports

|February 10, 2015

Summary

This summary is machine-generated.

Flash-lamp annealing of selenium-implanted silicon offers a scalable method for creating hyperdoped materials. This technique prevents surface segregation, achieving higher carrier mobility and lower resistivity compared to laser annealing methods.

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Last Updated: Apr 17, 2026

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Area of Science:

Materials Science
Semiconductor Physics
Nanotechnology

Background:

Chalcogen-hyperdoped silicon is crucial for infrared photodetectors and solar cells.
Previous fabrication methods like laser annealing face challenges with surface segregation due to low chalcogen solubility in silicon.

Purpose of the Study:

To introduce and evaluate flash-lamp annealing as a novel solid-phase processing technique for chalcogen-hyperdoped silicon.
To compare flash-lamp annealing with traditional laser annealing methods.

Main Methods:

Selenium ions were implanted into silicon wafers.
Flash-lamp annealing was performed in the millisecond timescale.
Characterization of substitutional fraction, concentration, resistivity, and carrier mobility was conducted.

Main Results:

Flash-lamp annealed selenium-implanted silicon achieved a substitutional fraction of ~70% at concentrations up to 2.3%.
Achieved lower resistivity and higher carrier mobility compared to nanosecond pulsed laser annealed samples.
Demonstrated superior performance in preventing surface segregation.

Conclusions:

Flash-lamp annealing is an effective and scalable method for producing high-quality chalcogen-hyperdoped silicon.
This technique overcomes the limitations of laser annealing, particularly surface segregation.
The developed method shows significant promise for advanced silicon-based electronic and optoelectronic devices.