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Direct imaging of charge transport in progressively reduced graphene oxide using electrostatic force microscopy
Sibel Ebru Yalcin1, Charudatta Galande, Rajesh Kappera
1†Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States.
ACS Nano
|February 11, 2015
Summary
Graphene oxide (GO) transitions from insulating to conducting with reduction. Electrostatic force microscopy reveals charge transport pathways and potential barriers in reduced graphene oxide (rGO), enabling bifunctional optoelectronic applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphene oxide (GO) is a versatile material for optoelectronics due to tunable electrical and optical properties.
- Understanding the transition from insulating to conducting states in GO is crucial for its application.
Purpose of the Study:
- To investigate the evolution of optoelectronic properties in graphene oxide (GO) during its reduction process.
- To visualize charge propagation and identify factors influencing charge transport in reduced graphene oxide (rGO).
Main Methods:
- Combination of electrostatic force microscopy (EFM) and optical spectroscopy.
- Direct visualization of charge propagation and potential barriers in reduced graphene oxide (rGO).
- Complementary theoretical modeling using quantum chemistry calculations.
Main Results:
- EFM visualized rapid charge migration over micrometers in rGO, irrespective of polarity.
- An insurmountable potential barrier between rGO and GO was identified as critical for charge transport.
- A bifunctional state in GO was identified, preserving optical properties alongside electrical conductivity.
Conclusions:
- The study provides insights into charge transport mechanisms in reduced graphene oxide.
- Identified potential barriers play a key role in regulating charge transport.
- Design principles for developing bifunctional GO-based optoelectronic devices are established.
