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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
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Linearly polarized emission from an embedded quantum dot using nanowire morphology control
Andrew P Foster1, John P Bradley, Kirsty Gardner
1Department of Physics and Astronomy, University of Sheffield , Sheffield S3 7RH, United Kingdom.
Nano Letters
|February 13, 2015
Summary
Catalyst-free growth of elongated gallium arsenide (GaAs) nanowires enables the creation of quantum dots. These quantum dots emit strongly linearly polarized light, ideal for quantum information applications.
Area of Science:
- Materials Science
- Nanotechnology
- Quantum Physics
Background:
- Gallium arsenide (GaAs) nanowires are crucial for optoelectronic devices.
- Achieving controlled anisotropy in nanowire growth is challenging.
- Developing polarized single photon sources is key for quantum technologies.
Purpose of the Study:
- To develop a catalyst-free method for growing GaAs nanowires with controlled elongated cross sections.
- To integrate indium gallium arsenide (InGaAs) quantum dots within these anisotropic nanowires.
- To investigate the optical properties, specifically photoluminescence polarization, of the embedded quantum dots.
Main Methods:
- Utilizing a silicon dioxide growth mask with patterned nanoscale openings on a (111)B GaAs substrate.
- Employing Metalorganic Vapor Phase Epitaxy (MOVPE) for catalyst-free nanowire growth.
- Introducing indium during growth to form InGaAs quantum dots with weak radial confinement.
Main Results:
- Successfully grew vertical GaAs nanowires with cross sections elongated along specific crystallographic directions ([21̅1̅] and [1̅12]).
- Fabricated InGaAs quantum dots within the anisotropic nanowires.
- Observed strongly linearly polarized photoluminescence (PL) emission (>90%) from the quantum dots, aligned with the nanowire's elongation axis.
Conclusions:
- The anisotropic nanowire structure confines optical modes, leading to highly polarized PL emission.
- This bottom-up approach offers a viable route for fabricating linearly polarized single photon sources.
- The developed technique holds promise for advancing quantum information processing and communication applications.
