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Updated: Apr 17, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices

Agnes Gubicza1, Miklós Csontos, András Halbritter

  • 1Department of Physics, Budapest University of Technology and Economics, Budafoki ut 8, 1111 Budapest, Hungary. gubicza@dept.phy.bme.hu.

Nanoscale
|February 17, 2015
PubMed

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