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Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping
F Y Bruno1, M N Grisolia1, C Visani1
1Unité Mixte de Physique CNRS/Thales, 1 Avenue A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France.
Nature Communications
|February 18, 2015
Summary
Complex oxide interfaces create novel states for spintronic devices. Magnetic reconstruction in LaFeO(3)/La(0.7)Sr(0.3)MnO(3) heterostructures induces spin selectivity, impacting tunnel magnetoresistance.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Complex oxide interfaces exhibit emergent phenomena due to electronic, orbital, and magnetic reconstructions.
- These interfacial states offer potential for advanced electronic and spintronic devices.
Purpose of the Study:
- To investigate the influence of magnetic reconstruction at oxide interfaces on spin selectivity.
- To understand how interfacial spin properties affect spin transport in magnetic tunnel junctions.
Main Methods:
- Fabrication of epitaxial heterostructures using antiferromagnetic LaFeO(3) (LFO) and ferromagnetic La(0.7)Sr(0.3)MnO(3) (LSMO).
- Utilized X-ray photoemission electron microscopy (XPEEM) to probe interfacial magnetic properties and domain structures.
Main Results:
- A net magnetic moment was induced in the antiferromagnetic LaFeO(3) near the interface with La(0.7)Sr(0.3)MnO(3).
- The ferromagnetic domain structure of the manganite electrodes imprinted onto the antiferromagnetic tunnel barrier, conferring spin selectivity.
- Coexisting ferromagnetic and antiferromagnetic interactions influenced tunnel magnetoresistance through competing spin-polarization and spin-filtering effects.
Conclusions:
- Magnetic reconstruction at complex oxide interfaces is crucial for controlling interfacial spin selectivity.
- The imprinted magnetic structure in the antiferromagnetic layer enhances spin transport properties.
- Understanding these interfacial magnetic interactions is key for designing novel spintronic devices.
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