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Updated: Apr 17, 2026

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Published on: December 29, 2016
Theoretical understanding on band engineering of Mn-doped lead chalcogenides PbX (X = Te, Se, S)
Xiaojian Tan1, Hezhu Shao, Tianqi Hu
1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
Abstract:
Electronic structures of Mn-doped PbX (X = Te, Se, S) are investigated by first-principles calculations. It is found that the Mn-doping in PbTe enlarges the band gap and increases the valence bands degeneracy, showing good agreement with experimental measurements. This band adjustment is demonstrated to be from the anti-bonding of Te-p and Mn-d orbitals. Along the series of PbTe-PbSe-PbS, the band modification of Mn-doping undergoes a gradual transition from multiple valence bands type to resonant states type, owing to the downwards shifted anion-p orbitals. This work provides essential understandings on the band engineering of Mn-doped lead chalcogenides thermoelectric materials.
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