Related Experiment Video
Updated: Apr 17, 2026

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Two components for one resistivity in LaVO3/SrTiO3 heterostructure
H Rotella1, O Copie, A Pautrat
1Laboratoire CRISMAT, CNRS UMR 6508, ENSICAEN et Université de Caen, 6 Bd Maréchal Juin, 14050 Caen Cedex 4, France. NUSNNI-NanoCore, National University of Singapore, 117411 Singapore.
Abstract:
A series of 100 nm LaVO3 thin films have been synthesized on (0 0 1)-oriented SrTiO3 substrates using the pulsed laser deposition technique, and the effects of growth temperature are analyzed. Transport properties reveal a large electronic mobility and a non-linear Hall effect at low temperature. In addition, a cross-over from a semiconducting state at high-temperature to a metallic state at low-temperature is observed, with a clear enhancement of the metallic character as the growth temperature increases. Optical absorption measurements combined with the two-bands analysis of the Hall effect show that the metallicity is induced by the diffusion of oxygen vacancies in the SrTiO3 substrate. These results allow us to understand that the film/substrate heterostructure behaves as an original semiconducting-metallic parallel resistor, and electronic transport properties are consistently explained.
Related Concept Videos
Resistivity
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
Schottky Barrier Diode
Resistance
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Equivalent Resistance

