Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Resistivity01:22

Resistivity

6.3K
When a voltage is applied to a conductor, an electrical field is generated, and charges in the conductor feel the force due to the electrical field. The current density that results depends on the electrical field and the properties of the material. In some materials, including metals at a given temperature, the current density is approximately proportional to the electrical field. In these cases, the current density can be modeled as:
6.3K
Non-ohmic Devices00:51

Non-ohmic Devices

1.7K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.7K
Schottky Barrier Diode01:27

Schottky Barrier Diode

1.3K
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
1.3K
Resistance01:19

Resistance

8.0K
When a current moves through any conductor, the conductor causes some level of difficulty for the current to flow. The measure of that difficulty is known as the resistance of the material and is represented by R. Every material has its own resistance. In the case of conductors, heat is emitted whenever a current passes through them. Resistance depends on the resistivity of the material. Resistivity is a characteristic of the material used to fabricate electrical components, whereas the...
8.0K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
Equivalent Resistance01:16

Equivalent Resistance

1.3K
In circuit analysis, situations often arise where resistors are neither in series nor parallel configurations. To tackle such scenarios, three-terminal equivalent networks like the wye (Y) (Figure 1 (a)) or tee (T) and delta (Δ) (Figure 1 (b)) or pi (π) networks come into play. These networks offer versatile solutions and are frequently encountered in various applications, including three-phase electrical systems, electrical filters, and matching networks.
1.3K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

The effectiveness of two psychomotor therapy programmes on physical fitness and physical self-concept in nonpsychotic psychiatric patients: a randomized controlled trial.

Clinical rehabilitation·2003
Same author

Interaction of proteinase 3 with CD11b/CD18 (beta2 integrin) on the cell membrane of human neutrophils.

Journal of leukocyte biology·2003
Same author

A novel combination of promoter and enhancers increases transgene expression in vascular smooth muscle cells in vitro and coronary arteries in vivo after adenovirus-mediated gene transfer.

Gene therapy·2003
Same author

Comparison of selection methods for optimizing genetic gain and gene diversity in a red pine ( Pinus resinosa Ait.) seedling seed orchard.

TAG. Theoretical and applied genetics. Theoretische und angewandte Genetik·2003
Same author

Mapping a gene for 46,XY gonadal dysgenesis by linkage analysis.

Clinical genetics·2003
Same author

Neurotransmission and viscoelasticity in the ovine fetal bladder after in utero bladder outflow obstruction.

American journal of physiology. Regulatory, integrative and comparative physiology·2003

Related Experiment Video

Updated: Apr 17, 2026

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
11:54

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

10.9K

Two components for one resistivity in LaVO3/SrTiO3 heterostructure.

H Rotella1, O Copie, A Pautrat

  • 1Laboratoire CRISMAT, CNRS UMR 6508, ENSICAEN et Université de Caen, 6 Bd Maréchal Juin, 14050 Caen Cedex 4, France. NUSNNI-NanoCore, National University of Singapore, 117411 Singapore.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|February 18, 2015
PubMed
Summary

LaVO3 thin films exhibit a transition from semiconducting to metallic behavior at low temperatures. This metallicity, enhanced by growth temperature, is driven by oxygen vacancies in the SrTiO3 substrate.

More Related Videos

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
06:44

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

4.0K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.5K

Related Experiment Videos

Last Updated: Apr 17, 2026

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
11:54

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

10.9K
Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
06:44

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

4.0K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.5K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Thin Film Technology

Background:

  • Lanthanum vanadate (LaVO3) is a correlated oxide with potential applications in electronics.
  • Understanding the electronic properties of LaVO3 thin films is crucial for device development.
  • Heterostructures involving perovskite oxides can exhibit unique electronic phenomena.

Purpose of the Study:

  • To investigate the influence of growth temperature on the electronic properties of LaVO3 thin films.
  • To analyze the transport mechanisms and phase transitions in LaVO3/SrTiO3 heterostructures.
  • To elucidate the role of oxygen vacancies in inducing metallic behavior.

Main Methods:

  • Pulsed laser deposition (PLD) for synthesizing 100 nm LaVO3 thin films on SrTiO3 substrates.
  • Temperature-dependent transport measurements (resistivity, Hall effect) to characterize electronic properties.
  • Optical absorption spectroscopy to complement transport data and analyze electronic band structure.

Main Results:

  • Observed a semiconductor-to-metal transition at low temperatures, dependent on growth temperature.
  • Measured high electronic mobility and a non-linear Hall effect at low temperatures.
  • Attributed the induced metallicity to oxygen vacancy diffusion from the SrTiO3 substrate.

Conclusions:

  • The LaVO3/SrTiO3 heterostructure functions as a parallel resistor system with distinct semiconducting and metallic components.
  • Oxygen vacancies play a critical role in tuning the electronic properties of the heterostructure.
  • Growth temperature is a key parameter for controlling the metallic character of LaVO3 thin films.