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Origin of the accumulation layer at the InN/a-In2O3 interface
Antonio Aliano1, Giancarlo Cicero, Alessandra Catellani
1Department of Applied Science and Technology, Politecnico di Torino , Corso Duca degli Abruzzi 24, 10129 Torino, Italy.
ACS Applied Materials & Interfaces
|February 19, 2015
Summary
First-principles calculations reveal that the amorphous Indium Oxide/Indium Nitride interface is a Type I interface. This interface structure explains the electron accumulation layer and increased conductivity in oxidized Indium Nitride nanowires.
Area of Science:
- Materials Science
- Solid State Physics
- Computational Chemistry
Background:
- Indium Nitride (InN) and its native amorphous oxide (In2O3) are crucial for electronic applications.
- Understanding the In2O3/InN heterostructure is key to explaining observed conductivity enhancements.
Purpose of the Study:
- To investigate the electronic and structural properties of the amorphous In2O3/InN (11̅00) heterostructure using first-principles calculations.
- To elucidate the origin of the electron accumulation layer at the InN/amorphous In2O3 interface.
Main Methods:
- First-principles Density Functional Theory (DFT) calculations.
- Microscopic analysis of the heterostructure interface.
Main Results:
- The amorphous In2O3/InN interface is classified as a Type I interface.
- Identification of N-O bonds and N dangling bonds at the interface.
- These interfacial features are responsible for the formation of donor states.
Conclusions:
- The study clarifies the microscopic origin of donor states at the InN/amorphous In2O3 interface.
- Findings explain the electron accumulation layer and increased conductivity in spontaneously oxidized InN nanowires.
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