Determination of Crystal Structures
X-ray Crystallography
Castigliano's Theorem
Atomic Nuclei: Larmor Precession Frequency
Three-Dimensional Analysis of Strain
Elastic Strain Energy for Shearing Stresses
You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Updated: Apr 17, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
A C Leff1, C R Weinberger2, M L Taheri1
1Department of Materials Science & Engineering, Drexel University, Philadelphia, PA, USA.
This study quantifies dislocation density using the Nye tensor and precession electron diffraction automated crystallographic orientation mapping (PED-ACOM) in transmission electron microscopy (TEM). The method reveals dislocation structures and dynamics, improving microstructural analysis.
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: