Interfacial control toward efficient and low-voltage perovskite light-emitting diodes

Area of Science:

• Materials Science
• Optoelectronics
• Solid-State Physics

Background:

• Perovskite light-emitting diodes (PeLEDs) show promise for next-generation displays and lighting.
• Achieving high efficiency and brightness, especially in the near-infrared spectrum, remains a challenge.
• Solution-processed emitters offer a cost-effective fabrication route but often suffer from performance limitations.

Purpose of the Study:

• To enhance the performance of perovskite light-emitting diodes through interfacial engineering.
• To develop highly efficient near-infrared (NIR) and green PeLEDs using solution-processed emitters.
• To investigate the impact of interfacial modifications on device efficiency and stability.

Main Methods:

• Fabrication of PeLEDs utilizing a novel interfacial engineering strategy.
• Employing solution-processed perovskite emitters for both NIR and green emission.
• Characterization of device performance, including external quantum efficiency, luminance, and operational stability.

Main Results:

• Demonstrated high-performance PeLEDs with record efficiencies for solution-processed NIR devices.
• Achieved efficient green PeLEDs operating at high brightness levels.
• Interfacial engineering significantly improved charge injection/extraction and reduced non-radiative recombination.

Conclusions:

• Interfacial engineering is a powerful strategy for optimizing PeLED performance.
• Solution-processed emitters can achieve competitive efficiencies in both NIR and green spectral regions.
• The developed PeLEDs represent a significant advancement for optoelectronic applications.