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Structural Properties of wurtzite InP-InGaAs nanowire core-shell heterostructures
Magnus Heurlin1, Tomaš Stankevič2, Simas Mickevičius2
1†The Nanometer Structure Consortium, Department of Physics, Lund University, Box 118, 221 00 Lund, Sweden.
Abstract:
We report on growth and characterization of wurtzite InP-In(1-x)Ga(x)As core-shell nanowire heterostructures. A range of nanowire structures with different Ga concentration in the shell was characterized with transmission electron microscopy and X-ray diffraction. We found that the main part of the nanowires has a pure wurtzite crystal structure, with occasional stacking faults occurring only at the top and bottom. This allowed us to determine the structural properties of wurtzite In(1-x)Ga(x)As. The InP-In(1-x)Ga(x)As core-shell nanowires show a triangular and hexagonal facet structure of {1100} and {101̅0} planes. X-ray diffraction measurements showed that the core and the shell are pseudomorphic along the c-axis, and the strained axial lattice constant is closer to the relaxed In(1-x)Ga(x)As shell. Microphotoluminescence measurements of the nanowires show emission in the infrared regime, which makes them suitable for applications in optical communication.
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