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Internal gain in Er-doped As₂S₃ chalcogenide planar waveguides
Optics Letters
|February 28, 2015
Abstract:
Low-loss erbium-doped As₂S₃ planar waveguides are fabricated by cothermal evaporation and plasma etching. Internal gain in the telecommunications band is demonstrated for the first time in any chalcogenide glass and additionally in a thin film planar waveguide amplifier configuration.
