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A miniature microcontroller curve tracing circuit for space flight testing transistors.

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A novel circuit monitored Silicon Carbide Junction Field Effect Transistor (SiC JFET) performance in space. This autonomous system measured device characteristics in the harsh low Earth orbit environment for over a year.

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Area of Science:

  • Space Science
  • Materials Science
  • Electrical Engineering

Background:

  • Silicon Carbide Junction Field Effect Transistors (SiC JFETs) are crucial for high-temperature and high-power applications.
  • Understanding their performance in extreme environments like low Earth orbit is vital for future space missions.

Purpose of the Study:

  • To design and implement a miniature microcontroller-based curve tracing circuit for monitoring SiC JFETs.
  • To assess the environmental effects on SiC JFET performance in the International Space Station (ISS) environment.

Main Methods:

  • Developed an autonomous microcontroller circuit capable of measuring current vs. voltage (I-V) characteristics.
  • Integrated the circuit into the 7th Materials on the International Space Station Experiment (MISSE7) for over a year of external ISS exposure.
  • Designed the circuit for low current, high temperature, and high drain-to-source resistance SiC JFETs, including current limiting.

Main Results:

  • The circuit successfully operated autonomously on the ISS external structure for over a year.
  • Collected valuable I-V data sets of SiC JFETs exposed to the space environment.
  • Transmitted collected data serially to an external communication interface for analysis.

Conclusions:

  • The novel curve tracing circuit effectively monitored SiC JFET performance in the challenging low Earth orbit environment.
  • The autonomous, miniaturized design is suitable for long-term space-based material characterization experiments.
  • The collected data provides insights into the reliability and degradation of SiC JFETs in space.