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Updated: Apr 16, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

Nanoscale electrostatic control of oxide interfaces.

Srijit Goswami¹, Emre Mulazimoglu¹, Lieven M K Vandersypen¹

¹Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands.

|March 10, 2015

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We created a versatile platform for defining nanoscale structures at oxide interfaces. This allows precise control over electron confinement, enabling studies of superconductivity and the Josephson effect.

Area of Science:

Condensed matter physics
Materials science
Nanotechnology

Background:

Oxide interfaces exhibit unique electronic properties.
Controlling electron behavior at the nanoscale is crucial for next-generation electronics.

Purpose of the Study:

To develop a platform for defining nanostructures at oxide interfaces.
To demonstrate controllable electrostatic confinement of electrons.
To investigate phenomena like superconductivity and the Josephson effect.

Main Methods:

Utilizing patterned top gates for electrostatic confinement.
Employing LaAlO3/SrTiO3 as a model system.
Performing experiments from room temperature down to 50 mK.

Main Results:

Keywords:

Oxide interfaces nanoelectronics split gates superconducting weak link top-gating

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Last Updated: Apr 16, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Demonstrated controllable confinement of electrons to nanoscale regions.
Formed a narrow conducting channel with tunable width.
Induced a local superconducting-to-insulating transition.
Observed indications of a gate-voltage controlled Josephson effect.

Conclusions:

The developed platform offers robust and versatile control over electron behavior at oxide interfaces.
This enables detailed studies of nanoscale electronic and superconducting phenomena.
The technology holds promise for novel electronic device applications.