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Quantitative sub-surface and non-contact imaging using scanning microwave microscopy.

Georg Gramse1, Enrico Brinciotti, Andrea Lucibello

  • 1Johannes Kepler University of Linz, Institute for Biophysics, Gruberstrasse 40, A-4020 Linz, Austria.

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|March 10, 2015
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Summary
This summary is machine-generated.

Scanning microwave microscopy (SMM) enables calibrated sub-surface and non-contact capacitance imaging of silicon. This technique effectively visualizes dopant variations beneath dielectric layers, crucial for semiconductor analysis.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Scanning microwave microscopy (SMM) is a powerful technique for material characterization.
  • Accurate capacitance imaging is essential for analyzing semiconductor properties.

Purpose of the Study:

  • To quantitatively study the capability of SMM for calibrated sub-surface and non-contact capacitance imaging of silicon samples.
  • To demonstrate SMM's sensitivity for sub-surface imaging under dielectric layers.
  • To analyze the influence of imaging parameters on SMM sensitivity and quantitative capacitance measurements.

Main Methods:

  • Quantitative study of SMM at broadband frequencies (1-20 GHz).
  • Measurement of calibrated capacitance images on silicon samples with varying dopant densities and SiO2 dielectric films.
  • Non-contact SMM imaging in lift-mode and constant height mode.
  • Finite element modeling to analyze tip radius and tip-sample distance effects.

Main Results:

  • SMM successfully sensed dopant areas under a 400 nm thick oxide layer.
  • Non-contact SMM imaging was quantitatively demonstrated on a 50 nm thick SiO2 test pad.
  • Differences between non-contact and contact mode capacitances were analyzed concerning tip diameter and tip-sample distance.

Conclusions:

  • SMM demonstrates high sensitivity for sub-surface imaging of silicon, even under significant dielectric coverage.
  • Understanding the impact of tip parameters is key to optimizing non-contact and sub-surface SMM imaging.
  • This work advances SMM towards routine application in non-contact and sub-surface semiconductor analysis.