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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
Published on: December 7, 2017
Wafer-level hysteresis-free resonant carbon nanotube transistors
Ji Cao1,2, Sebastian T Bartsch2, Adrian M Ionescu2
1†Nanoelectronics Lab, Stanford University, Stanford, California 94305, United States.
Abstract:
We report wafer-level fabrication of resonant-body carbon nanotube (CNT) field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obtained. Through combined chemical and thermal treatments, hysteresis-free (in vacuum) suspended-body CNTFETs have been demonstrated. Electrostatic actuation by lateral gate and FET-based readout of mechanical resonance have been achieved at room temperature. Both upward and downward in situ frequency tuning has been experimentally demonstrated in the dual-gate architecture. The minuscule mass, high resonance frequency, and in situ tunability of the resonant CNTFETs offer promising features for applications in radio frequency signal processing and ultrasensitive sensing.
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