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Electrical transport properties of Ge-doped GaN nanowires

M Schäfer1, M Günther, C Länger

  • 1I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, D-35392 Gießen, Germany.

Nanotechnology
|March 12, 2015
PubMed

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