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Related Experiment Video

Updated: Apr 16, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

A high-mobility electronic system at an electrolyte-gated oxide surface.

Patrick Gallagher¹, Menyoung Lee¹, Trevor A Petach¹

¹Department of Physics, Stanford University, Stanford, California 94305, USA.

Nature Communications

|March 13, 2015

Summary

Protecting materials with hexagonal boron nitride (hBN) shields them from damage during electrolyte gating. This method significantly enhances carrier mobility and density, enabling new research possibilities.

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Area of Science:

Materials Science
Condensed Matter Physics
Surface Science

Background:

Electrolyte gating enables high carrier densities but introduces disorder.
Electrochemical reactions and ion contamination limit its application.
Disorder-sensitive phenomena studies are hindered by this technique's limitations.

Purpose of the Study:

To overcome limitations of electrolyte gating by minimizing disorder.
To demonstrate a protective method for sensitive materials.
To enable high carrier density modulation without adverse reactions.

Main Methods:

Utilizing a chemically inert, atomically smooth hexagonal boron nitride (hBN) sheet as a protective layer.
Applying electrolyte gating to strontium titanate (SrTiO3) protected by hBN.
Characterizing carrier density and mobility of the protected material.

Main Results:

Achieved over 10-fold improvement in mobility for electrolyte-gated strontium titanate.
Reached carrier densities approaching 10^14 cm^-2.
Demonstrated the protective efficacy of the hBN layer against electrochemical reactions and surface disorder.

Conclusions:

Hexagonal boron nitride encapsulation overcomes key limitations of electrolyte gating.
The technique is broadly applicable to various materials requiring high carrier modulation.
Enables new research avenues for disorder-sensitive phenomena at high carrier densities.