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Updated: Apr 16, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
Enhanced sensitivity of double gate junctionless transistor architecture for biosensing applications
Mukta Singh Parihar1, Abhinav Kranti
1Low Power Nanoelectronics Research Group, Electrical Engineering Discipline, Indian Institute of Technology Indore, India.
Abstract:
In the present work, we demonstrate the potential of double gate junctionless (JL) architecture for enhanced sensitivity for detecting biomolecules in cavity modulated field effect transistors (FETs). The higher values of body factor, achieved in asymmetric gate operation under impact ionization is utilized for enhanced sensing margin which is nearly five times higher than compared to symmetrical mode operation. The intrinsic detection sensitivity is evaluated in terms of threshold voltage change, and the ratio of drain current in the presence and absence of biomolecules in JL nanotransistors. It is shown that asymmetric mode JL transistor achieves a higher degree of detection sensitivity even for a partially filled cavity. The work demonstrates the potential of JL channel architecture for cavity based dielectric modulated FET biosensors.
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