Giant negative magnetoresistance in Manganese-substituted Zinc Oxide
X L Wang1, Q Shao2, A Zhuravlyova3
11] Department of Physics and Materials Science, Device Physics Group, City University of Hong Kong, Kowloon, Hong Kong SAR, China [2] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [3] Shenzhen Research Institute, City University of Hong Kong, High-Tech Zone, Nanshan District, Shenzhen 518057, China.
Abstract:
We report a large negative magnetoresistance in Manganese-substituted Zinc Oxide thin films. This anomalous effect was found to appear in oxygen-deficient films and to increase with the concentration of Manganese. By combining magnetoresistive measurements with magneto-photoluminescence, we demonstrate that the effect can be explained as the result of a magnetically induced transition from hopping to band conduction where the activation energy is caused by the sp-d exchange interaction.
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