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Updated: Apr 16, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions
Kun Zhang1, Yan-ling Cao, Yue-wen Fang
1School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China. shishenyan@sdu.edu.cn yftian@sdu.edu.cn.
Abstract:
Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO-ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal-insulator transition of the CoO(1-v) layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.
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