Related Experiment Video
Updated: Apr 16, 2026
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Manganite-based memristive heterojunction with tunable non-linear I-V characteristics
Hong-Sub Lee1, Hyung-Ho Park, M J Rozenberg
1Department of Materials Science and Engineering, Yonsei University, Seodaemun-Ku, Seoul 120-749, Korea. hhpark@yonsei.ac.kr.
Abstract:
A resistive random access memory (ReRAM) based on the memristive effect allows high-density integration through a cross-point array (CPA) structure. However, a significant common drawback of the CPA configuration is the crosstalk between cells. Here, we introduce a solution based on a novel heterojunction stack solely made of members of the perovskite manganite family Pr(1-x)Ca(x)MnO3 (PCMO) and CaMnO(3-δ) (CMO) which show electroforming-free bipolar resistive switching. The heterojunction consists of rectifying interfaces and shows a symmetrical and tunable non-linear current-voltage curve. The spectromicroscopic measurements support the scenario of specialized roles, with the memristive effect taking place at the active Al-PCMO interface via a redox mechanism, while non-linearity was achieved by adopting a rectifying double interface PCMO-CMO-PCMO.
Related Concept Videos
01:22MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
01:27Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
01:25MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
01:17Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
01:24Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
01:16Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...