Related Experiment Video
Updated: Apr 16, 2026
09:49
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
4.5K
Manganite-based memristive heterojunction with tunable non-linear I-V characteristics
Hong-Sub Lee1, Hyung-Ho Park, M J Rozenberg
1Department of Materials Science and Engineering, Yonsei University, Seodaemun-Ku, Seoul 120-749, Korea. hhpark@yonsei.ac.kr.
Nanoscale
|March 21, 2015
Summary
This study presents a novel perovskite manganite heterojunction for resistive random access memory (ReRAM). This solution overcomes crosstalk issues in cross-point array (CPA) structures, enabling electroforming-free bipolar resistive switching.
Area of Science:
- Materials Science
- Solid State Physics
- Device Physics
Background:
- Resistive random access memory (ReRAM) offers high-density integration via cross-point array (CPA) structures.
- Crosstalk between cells is a significant drawback in CPA configurations, hindering performance.
Purpose of the Study:
- To introduce a novel heterojunction stack for ReRAM that mitigates CPA crosstalk.
- To achieve electroforming-free bipolar resistive switching using perovskite manganites.
Main Methods:
- Fabrication of a heterojunction stack using Pr(1-x)Ca(x)MnO3 (PCMO) and CaMnO(3-δ) (CMO).
- Characterization of the heterojunction's current-voltage (I-V) properties and resistive switching behavior.
- Spectromicroscopic measurements to elucidate the switching mechanism.
Main Results:
- The novel heterojunction exhibits electroforming-free bipolar resistive switching.
- The device displays symmetrical and tunable non-linear current-voltage characteristics.
- Memristive effect localized at the Al-PCMO interface via redox mechanism; non-linearity from PCMO-CMO-PCMO interface.
Conclusions:
- The developed perovskite manganite heterojunction effectively addresses crosstalk in ReRAM CPA structures.
- This approach enables efficient and reliable electroforming-free bipolar resistive switching.
- The specialized roles of interfaces contribute to the device's performance, paving the way for advanced memory technologies.
Related Concept Videos
01:22MOSFET: Enhancement Mode
1.0K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.0K
01:27Biasing of Metal-Semiconductor Junctions
857
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
857
01:25MOS Capacitor
1.9K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.9K
01:17Characteristics of MOSFET
1.4K
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
1.4K
01:24Metal-Semiconductor Junctions
1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
01:16Biasing of P-N Junction
2.7K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.7K