NiO hierarchical nanorings on SiC: enhancing relaxation to tune microwave absorption at elevated temperature

We fabricated NiO nanorings on SiC, a novel hierarchical architecture, by a facile two-step method. The dielectric properties depend on temperature and frequency in the range from 373 to 773 K and X band. The imaginary part and loss tangent increase more than four times and three times with increasing temperature, respectively. The architecture demonstrates multirelaxation and possesses high-efficient absorption. The reflection loss exceeds -40 dB and the bandwidth covers 85% of X band (approximately -20 dB). The synergistic effect between multirelaxation and conductance is beneficial to the microwave absorption. Our findings provide a novel and feasible strategy to tune microwave absorption.