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This study investigates the Mott transition in organic conductors using pressure-dependent conductivity and thermoelectric power measurements. Findings reveal critical exponents aligning with the Ising universality class, offering insights into metal-insulator transitions.

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Area of Science:

  • Condensed matter physics
  • Materials science
  • Organic electronics

Background:

  • The Mott transition describes a metal-insulator transition in materials driven by electron-electron interactions.
  • Layered organic conductors, such as EtMe_{3}P[Pd(dmit)_{2}]_{2}, offer a unique platform to study fundamental electronic phase transitions.
  • Understanding the critical behavior near the Mott transition is crucial for designing novel electronic materials.

Purpose of the Study:

  • To investigate the pressure dependence of conductivity and thermoelectric power in EtMe_{3}P[Pd(dmit)_{2}]_{2}.
  • To objectively determine the Mott-Hubbard transition using the critical behavior of thermoelectric effects.
  • To analyze the relationship between the metal-insulator crossing and conductivity changes under pressure.

Main Methods:

  • Isothermal pressure sweeps were performed on EtMe_{3}P[Pd(dmit)_{2}]_{2} samples.
  • Electrical conductivity and thermoelectric power were measured as a function of pressure.
  • Analysis focused on the critical exponents characterizing the Mott-Hubbard transition.

Main Results:

  • The thermoelectric effect's critical behavior clearly identified the Mott-Hubbard transition during pressure sweeps.
  • The metal-insulator crossing, determined by the thermoelectric minimum, did not coincide with the conductivity derivative maximum.
  • Critical exponents for the Mott-Hubbard transition were found to be consistent with the Ising universality class.

Conclusions:

  • Thermoelectric power provides a robust method for pinpointing Mott-Hubbard transitions in organic conductors.
  • The observed critical exponents suggest a universal behavior of the Mott-Hubbard transition, independent of system dimensionality.
  • Discrepancies in transition determination highlight the complexity of electronic phase transitions in these materials.