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Universality class of the mott transition
M Abdel-Jawad1, R Kato1, I Watanabe2
1Condensed Molecular Materials Laboratory, RIKEN, The Institute of Physical and Chemical Research, 2-1, Hirosawa, Wako, Saitama 351-0198, Japan.
Abstract:
Pressure dependence of the conductivity and thermoelectric power is measured through the Mott transition in the layer organic conductor EtMe_{3}P[Pd(dmit)_{2}]_{2}. The critical behavior of the thermoelectric effect provides a clear and objective determination of the Mott-Hubbard transition during the isothermal pressure sweep. Above the critical end point, the metal-insulator crossing, determined by the thermoelectric effect minimum value, is not found to coincide with the maximum of the derivative of the conductivity as a function of pressure. We show that the critical exponents of the Mott-Hubbard transition fall within the Ising universality class regardless of the dimensionality of the system.
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