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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Sidong Lei1, Fangfang Wen2,3, Liehui Ge1
1†Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States.
Researchers developed an ultrathin photodetector using Indium Selenide (InSe) that achieves high performance. By utilizing an avalanche effect and plasmonic enhancement, this device significantly boosts response and efficiency for 2D material photodetectors.
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