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An Atomically Layered InSe Avalanche Photodetector.

Sidong Lei1, Fangfang Wen2,3, Liehui Ge1

  • 1†Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States.

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Researchers developed an ultrathin photodetector using Indium Selenide (InSe) that achieves high performance. By utilizing an avalanche effect and plasmonic enhancement, this device significantly boosts response and efficiency for 2D material photodetectors.

Keywords:
2D photodetectorInSeavalanche effectimpact ionization

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Device Physics

Background:

  • Atomically thin photodetectors based on 2D materials offer potential for energy-efficient integrated devices.
  • Low optical absorption in 2D materials limits photoinduced carrier generation and device performance.
  • Existing methods to improve photodetector performance often increase dark current and slow response times.

Purpose of the Study:

  • To enhance the performance of 2D material-based photodetectors.
  • To overcome limitations of low optical absorption and poor carrier generation.
  • To achieve high photosensitivity, low dark current, and fast response times in ultrathin photodetectors.

Main Methods:

  • Realization of the avalanche effect in an ultrathin Indium Selenide (InSe) photodetector.
  • Exploitation of a large Schottky barrier between InSe and Aluminum (Al) electrodes to enable high bias voltage application.
  • Plasmonic enhancement using arrays of Al nanodisks patterned onto the InSe layer.

Main Results:

  • Demonstration of avalanche multiplication significantly enhancing the device response.
  • Achieved external quantum efficiency approaching 866%.
  • Maintained a dark current in the picoamp range and a fast response time of 87 μs.

Conclusions:

  • The developed InSe-based photodetector exhibits significant advances in overall performance for 2D material devices.
  • The combination of avalanche effect and plasmonic enhancement offers a viable strategy for high-performance photodetector design.
  • This work paves the way for highly efficient and responsive ultrathin photodetectors.