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Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
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Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer.

T D Skinner1, K Olejník2, L K Cunningham1

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Researchers experimentally separated two relativistic spin torque mechanisms, the spin-Hall effect and inverse spin-galvanic effect, in a ferromagnet/semiconductor structure. This disentanglement advances spintronic memory device technology.

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Area of Science:

  • Spintronics
  • Condensed Matter Physics
  • Materials Science

Background:

  • Relativistic spin torques at ferromagnet/paramagnet interfaces are a promising spintronic technology for advanced magnetic memory.
  • Two primary mechanisms, the spin-Hall effect and inverse spin-galvanic effect, are proposed to drive these torques.
  • Experimental methods to distinguish these mechanisms are crucial for device optimization.

Purpose of the Study:

  • To experimentally disentangle the spin-Hall effect and inverse spin-galvanic effect contributions to relativistic spin torques.
  • To analyze the vector components of these torques in a tailored material system.
  • To elucidate the complementary roles of different microscopic mechanisms in spintronic devices.

Main Methods:

  • Utilized an epitaxial transition-metal ferromagnet/semiconductor-paramagnet single-crystal structure.
  • Employed the all-electrical ferromagnetic resonance technique for vector torque analysis.
  • Leveraged a semiconductor paramagnet with Dresselhaus crystal inversion asymmetry to separate torque components.

Main Results:

  • Successfully separated the torques arising from the inverse spin-galvanic effect and spin-Hall effect.
  • Identified the inverse spin-galvanic effect with the field-like torque component.
  • Attributed the spin-Hall effect to the antidamping-like torque component.

Conclusions:

  • The inverse spin-galvanic effect and spin-Hall effect contribute distinctly to torque components in the studied system.
  • These two microscopic mechanisms do not compete but rather complement each other.
  • This work provides a pathway for optimizing spintronic devices by understanding individual torque contributions.