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Updated: Apr 15, 2026

Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography

Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography

Published on: February 12, 2017

High-resolution and large-area nanoparticle arrays using EUV interference lithography.

Waiz Karim¹, Simon Andreas Tschupp, Mehtap Oezaslan

¹Laboratory for Micro and Nanotechnology, Paul Scherrer Institute, 5232 Villigen-PSI, Switzerland. yasin.ekinci@psi.ch.

|April 1, 2015

Summary

This summary is machine-generated.

Extreme ultraviolet (EUV) lithography enables high-throughput fabrication of 15 nm nanoparticle arrays over large areas. This advancement facilitates the study of nanoparticle properties using well-defined model systems.

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Last Updated: Apr 15, 2026

Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography

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Area of Science:

Nanotechnology
Materials Science
Lithography

Background:

Understanding nanoparticle properties requires well-defined model systems.
Chemical synthesis yields limited control over nanoparticle size, shape, and order.
Conventional lithography offers limited resolution or throughput for large-area patterning.

Purpose of the Study:

To develop a high-throughput method for fabricating large-area, well-defined nanoparticle arrays.
To enable advanced characterization of nanoparticle ensembles.

Main Methods:

Utilized extreme ultraviolet (EUV) achromatic Talbot lithography.
Achieved high-resolution patterning of 15 nm particle arrays.
Fabricated arrays over several square centimeters with 100 nm periodicity.

Main Results:

Demonstrated high-throughput fabrication of nanoparticle arrays.
Achieved a particle density of 10(10) particles cm(-2).
Created model systems with well-defined, identical nanoparticles over large areas.

Conclusions:

EUV lithography is a viable technique for producing model systems for nanoparticle research.
This method overcomes limitations of chemical synthesis and conventional lithography.
Enables detailed study of structure-property relationships in large nanoparticle ensembles.