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High confinement, high yield Si(3)N(4) waveguides for nonlinear optical applications.

Jörn P Epping, Marcel Hoekman, Richard Mateman

    Optics Express
    |April 4, 2015
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    We developed a new method to create thick silicon nitride (Si3N4) waveguides for nonlinear optics. This technique minimizes defects and achieves low propagation losses, enabling high-performance photonic devices.

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    Area of Science:

    • Photonics
    • Materials Science
    • Optical Engineering

    Background:

    • Silicon nitride (Si3N4) is crucial for photonic integrated circuits.
    • Thick Si3N4 waveguides are needed for nonlinear optical applications.
    • Existing fabrication methods face challenges with stress and yield.

    Purpose of the Study:

    • To present a novel fabrication technique for thick Si3N4 waveguides.
    • To demonstrate the suitability of these waveguides for nonlinear optics.
    • To achieve high yield and low propagation losses.

    Main Methods:

    • Etching trenches in thermally oxidized silicon.
    • Filling trenches with Si3N4.
    • Characterizing waveguide properties, including propagation loss.

    Main Results:

    • Successfully fabricated Si3N4 waveguides up to 900 nm thickness.
    • Observed no stress-induced cracks, indicating high device yield.
    • Measured propagation losses as low as 0.4 dB/cm at 1550 nm.

    Conclusions:

    • The novel fabrication technique enables high-quality, thick Si3N4 waveguides.
    • The waveguides are suitable for nonlinear optical applications.
    • This method offers a promising route for advanced photonic device fabrication.