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    Picosecond-pulse lasers on silicon, utilizing III-V materials, were developed in linear and ring cavities. Hybrid mode-locking stabilized their repetition rates, demonstrating advanced laser technology.

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    Area of Science:

    • Integrated Photonics
    • Semiconductor Lasers
    • Optoelectronics

    Background:

    • III-V-on-silicon technology enables advanced photonic integrated circuits.
    • Mode-locked lasers are crucial for high-speed optical communications and signal processing.
    • Extended cavity geometries offer pathways to enhanced laser performance.

    Purpose of the Study:

    • To present picosecond-pulse III-V-on-silicon mode-locked lasers.
    • To investigate performance differences between linear and ring extended cavity geometries.
    • To demonstrate repetition rate stabilization using hybrid mode-locking.

    Main Methods:

    • Fabrication of III-V-on-silicon mode-locked lasers with linear and ring extended cavities.
    • Characterization of radio frequency (RF) linewidths in passive mode-locked operation.
    • Implementation of hybrid mode-locking for repetition rate stabilization.

    Main Results:

    • Achieved a 12 kHz -3dB linewidth for the fundamental RF tone at 4.7 GHz in the linear cavity geometry.
    • Achieved a 16 kHz -3dB linewidth for the fundamental RF tone at 4.7 GHz in the ring cavity geometry.
    • Successfully demonstrated stabilization of the repetition rate for both laser geometries.

    Conclusions:

    • III-V-on-silicon technology is suitable for developing high-performance picosecond-pulse lasers.
    • Extended cavity designs influence laser linewidth and performance.
    • Hybrid mode-locking provides an effective method for stabilizing laser repetition rates.