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Related Experiment Video

Updated: Apr 15, 2026

Characterizing Far-infrared Laser Emissions and the Measurement of Their Frequencies

Characterizing Far-infrared Laser Emissions and the Measurement of Their Frequencies

Published on: December 18, 2015

High performance, low dissipation quantum cascade lasers across the mid-IR range.

Alfredo Bismuto, Stéphane Blaser, Romain Terazzi

|April 4, 2015

Summary

This summary is machine-generated.

We developed low-power quantum cascade lasers (QCLs) for mid-infrared applications. These short-cavity, single-mode devices achieve 0.5 W threshold power at room temperature, improving manufacturing efficiency.

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Last Updated: Apr 15, 2026

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Area of Science:

Optoelectronics
Semiconductor devices
Mid-infrared technology

Background:

Quantum cascade lasers (QCLs) are crucial for mid-infrared (mid-IR) applications.
Developing low-power consumption devices is essential for portable and efficient systems.
Optimizing laser design parameters impacts performance and manufacturability.

Purpose of the Study:

To develop low-power consumption quantum cascade lasers (QCLs) across the mid-IR range.
To investigate the performance of short-cavity, single-mode QCLs with optimized facet reflectivities.
To assess the impact of chip length reduction on laser mounting yield and explore high-power capabilities.

Main Methods:

Fabrication of short-cavity, single-mode QCLs with optimized facet reflectivities.
Characterization of laser performance in continuous wave (CW) operation at room temperature.
Analysis of threshold dissipated power and device yield as a function of chip length.

Main Results:

Achieved threshold dissipated powers as low as 0.5 W in CW operation at room temperature.
Successfully fabricated single-mode QCLs spanning the wavelength range of 4.5 to 9.2 μm.
Demonstrated the beneficial impact of reduced chip length on laser mounting yield and presented high-power single-mode lasers.

Conclusions:

Short-cavity, single-mode QCLs with optimized facet reflectivities offer low power consumption in the mid-IR range.
Reducing chip length improves manufacturing yield for QCLs.
The developed fabrication process enables both low-power and high-power single-mode QCLs from the same wafers.