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Photoluminescence: Applications

Photoluminescence: Applications

Photoluminescence offers a wide range of applications due to its inherent sensitivity and selectivity. This technique allows for both direct and indirect analyses of the analyte. Direct quantitative analysis is possible when the analyte exhibits a favorable quantum yield for fluorescence or phosphorescence. However, an indirect analysis may be feasible if the analyte is not fluorescent or phosphorescent, or if the quantum yield is unfavorable. Indirect methods include reacting the analyte with...

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Related Experiment Video

Updated: Apr 15, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Tensile-strained germanium microdisk electroluminescence.

M Prost, M El Kurdi, A Ghrib

|April 4, 2015

Summary

This summary is machine-generated.

We achieved room temperature electroluminescence in strained germanium microdisks using silicon nitride. This demonstrates a key step towards population inversion for germanium-based light-emitting devices.

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Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

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Published on: July 26, 2016

Related Experiment Videos

Last Updated: Apr 15, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Published on: July 17, 2020

Step-by-Step Guide for Harnessing Organic Light Emitting Diodes by Solution Processed Device Fabrication of a TADF Emitter

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Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Published on: July 26, 2016

Area of Science:

Materials Science
Optoelectronics
Semiconductor Physics

Background:

Germanium's indirect bandgap limits its use in light-emitting applications.
Tensile strain can modify germanium's band structure, potentially enabling light emission.

Purpose of the Study:

To demonstrate room temperature electroluminescence in tensile-strained germanium microdisks.
To investigate strain transfer mechanisms and their impact on germanium optoelectronics.

Main Methods:

Fabrication of germanium microdisks with integrated silicon nitride stressors.
Utilizing Schottky contacts for carrier injection into n-type germanium.
Measuring strain via electroluminescence spectral red-shift and finite element modeling.

Main Results:

Successful transfer of biaxial tensile strain up to 0.72% into germanium microdisks.
Room temperature electroluminescence observed from the strained microdisks.
Correlation between carrier injection profile and achievable strain levels.

Conclusions:

Tensile-strained germanium microdisks can achieve room temperature electroluminescence.
Optimized strain transfer is crucial for enhancing germanium's light-emitting properties.
The demonstrated strain levels are discussed in the context of achieving population inversion in germanium.