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Related Concept Videos

Van der Waals Interactions01:24

Van der Waals Interactions

73.4K
Atoms and molecules interact with each other through intermolecular forces. These electrostatic forces arise from attractive or repulsive interactions between particles with permanent, partial, or temporary charges. The intermolecular forces between neutral atoms and molecules are ion–dipole, dipole–dipole, and dispersion forces, collectively known as van der Waals forces.
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Van der Waals Equation01:10

Van der Waals Equation

7.0K
The ideal gas law is an approximation that works well at high temperatures and low pressures. The van der Waals equation of state (named after the Dutch physicist Johannes van der Waals, 1837−1923) improves it by considering two factors.
First, the attractive forces between molecules, which are stronger at higher densities and reduce the pressure, are considered by adding to the pressure a term equal to the square of the molar density multiplied by a positive coefficient a. Second, the...
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Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

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Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...
97

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Related Experiment Video

Updated: Apr 15, 2026

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
08:49

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

Published on: December 4, 2014

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Repulsive van der waals forces self-limit native oxide growth.

Christian Bohling1, Wolfgang Sigmund1

  • 1Department of Materials Science and Engineering, University of Florida, 225 Rhines Hall, Gainesville, Florida 32611, United States.

Langmuir : the ACS Journal of Surfaces and Colloids
|April 8, 2015
PubMed
Summary

Silicon

Area of Science:

  • Materials Science
  • Surface Science
  • Physical Chemistry

Background:

  • Silicon's native oxide growth is self-limiting, reaching a stable thickness quickly.
  • The mechanisms behind this self-limiting behavior remain incompletely understood.

Purpose of the Study:

  • To investigate the role of van der Waals (vdW) forces in silicon's self-limiting native oxide growth.
  • To explore methods for overcoming this limitation to further increase oxide thickness.

Main Methods:

  • Theoretical analysis of repulsive and attractive van der Waals forces.
  • Experimental manipulation of the oxidation environment.

Main Results:

  • Repulsive vdW forces were identified as the primary barrier to further native oxide growth.

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Fabrication of Spatially Confined Complex Oxides
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Writing and Low-Temperature Characterization of Oxide Nanostructures

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  • Changing the oxidation environment to induce attractive vdW forces enabled increased oxide thickness at room temperature.

    • Conclusions:

    • Van der Waals forces are critical in controlling silicon native oxide thickness.
    • Tailoring vdW forces offers a novel pathway for controlled silicon oxidation.