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Updated: Apr 15, 2026
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Negative differential resistance in monolayer WTe2 tunneling transistors
1Department of Physics and the Center of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, People's Republic of China. Department of Physics, McGill University, Montreal, H3A 2T8, Canada.
Abstract:
We report theoretical investigations of quantum transport in monolayer transition metal dichalcogenide (TMDC) tunneling field effect transistors (TFETs). Due to the specific electronic structure of TMDC WTe(2), a transmission valley is found in the conduction band (CB). For a proper choice of the doping, gate and supply voltages the WTe(2) TFET can produce a giant negative differential resistance (NDR) with a peak to valley ratio as large as 10(3). The mechanism of NDR is identified to be due to a transport-mode bottleneck, i.e., the band to band tunneling from the valence band of the source is partially blocked by a transmission valley of the CB of the drain. More generally, our calculations show that electronic structures of at least six TMDC materials possess the transmission valley.
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