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Updated: Apr 15, 2026

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Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for

Lai-Guo Wang1, Xu Qian2, Yan-Qiang Cao2

  • 1National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 22 Hankou Road, Nanjing, 210093 People's Republic of China ; Anhui Key Laboratory of Functional Coordination Compounds, School of Chemistry and Chemical Engineering, Anqing Normal University, 128 Linghu South Road, Anhui, 246011 People's Republic of China.

Nanoscale Research Letters
|April 9, 2015
PubMed

Keywords:
Atomic layer depositionNon-volatile memoryResistance random access memoryTrilayer structure

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