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Updated: Apr 15, 2026

Low-energy Cathodoluminescence for OxyNitride Phosphors
Published on: November 15, 2016
Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen
Marco A Sousa1, Teresa C Esteves1, Nabiha Ben Sedrine1
1Departamento de Física e I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal.
Abstract:
We studied the optical properties of metalorganic chemical vapour deposited (MOCVD) InGaN/GaN multiple quantum wells (MQW) subjected to nitrogen (N) implantation and post-growth annealing treatments. The optical characterization was carried out by means of temperature and excitation density-dependent steady state photoluminescence (PL) spectroscopy, supplemented by room temperature PL excitation (PLE) and PL lifetime (PLL) measurements. The as-grown and as-implanted samples were found to exhibit a single green emission band attributed to localized excitons in the QW, although the N implantation leads to a strong reduction of the PL intensity. The green band was found to be surprisingly stable on annealing up to 1400°C. A broad blue band dominates the low temperature PL after thermal annealing in both samples. This band is more intense for the implanted sample, suggesting that defects generated by N implantation, likely related to the diffusion/segregation of indium (In), have been optically activated by the thermal treatment.
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