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Published on: August 2, 2019
Persistence of a two-dimensional topological insulator state in wide HgTe quantum wells
E B Olshanetsky1, Z D Kvon1,2, G M Gusev3
1Institute of Semiconductor Physics, Novosibirsk 630090, Russia.
Abstract:
Our experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm the persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically. Comparison of local and nonlocal resistance measurements indicate edge state transport in the samples of about 1 mm size at temperatures below 1 K. Temperature dependence of the resistances suggests an insulating gap of the order of a few meV. In samples with sizes smaller than 10 μm a quasiballistic transport via the edge states is observed.

