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Updated: Apr 14, 2026
Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries
Published on: April 22, 2013
Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy
Sathiabama Thiru, Masaki Asakawa1, Kazuki Honda1
1School of Advanced Science and Engineering, Waseda University , 3-4-1, Okubo, Shinjuku, Tokyo 169-8555, JAPAN.
Abstract:
In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements.
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