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Updated: Apr 14, 2026

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20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
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Novel type-II material system for laser applications in the near-infrared regime
1Department of Physics and Material Sciences Center, Philipps-Universität Marburg , Renthof 5, 35032 Marburg, Germany.
Abstract:
The design and experimental realization of a type-II "W"-multiple quantum well heterostructure for emission in the λ > 1.2 μm range is presented. The experimental photoluminescence spectra for different excitation intensities are analyzed using microscopic quantum theory. On the basis of the good theory-experiment agreement, the gain properties of the system are computed using the semiconductor Bloch equations. Gain values comparable to those of type-I systems are obtained.

